Datasheet > BL19N40

BL19N40

更新时间： 2023-12-06 20:09:06

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
13页	1048K
描述
BL19N40, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

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BL19N40 数据手册

BL19N40

Power MOSFET

5. Characteristics Curves

Figure 1a Safe Operating Area (No FullPAK)

Figure 1b Safe Operating Area (FullPAK)

Figure 2a Power Dissipation (No FullPAK)

Figure 2b Power Dissipation (FullPAK)

BL19N40

Rev 1.1

8/2019

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