Datasheet > BL03N10E

BL03N10E

更新时间： 2024-11-21 17:01:31

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	723K
描述
3A,100V, 2.5W, N Channel, Power MOSFETs

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BL03N10E 数据手册

N-Channel Enhancement Mode MOSFET

BL03N10E

Features



Electrostatic sensitive devices



Excellent package for good heat dissipation

APPLICATIONS



Power switching application

Hard switching and high frequency circuits

Uninterruptible power supply

Mechanical Data



Case: SOT-89

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

SOT-89

Ordering Information

Part Number

Package

SOT-89

Shipping Quantity

Marking Code

BL03N10E

1000 pcs / Tape & Reel

03N10

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

I_D

100

±20

Gate-to-Source Voltage

Continuous Drain Current (T_A= 25°C )

Continuous Drain Current (T_A= 70°C )

Pulsed Drain Current (t_p= 10μs)

I_D

2.3

I_DM

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation ^*1

P_D

R_θJA

R_θJL

R_θJC

T_J

2.5

°C /W

°C

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Lead ^*1

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

-55 ~ +150

T_STG

°C

MTM0124A: October 2022 [2.1]

www.gmesemi.com

12 3 4 5

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