Datasheet > BL038N06H

BL038N06H

更新时间： 2024-11-21 17:02:03

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	726K
描述
120A, 60V, 176W, N Channel, Power MOSFETs

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数据手册

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BL038N06H 数据手册

N-Channel Enhancement Mode MOSFET

BL038N06H

Features



Fully characterized avalanche voltage and current

Extremely low on-resistance R_DS(ON)

Excellent package for good heat dissipation

JESD22-A114-B ESD rating of class 2 per human body model

Mechanical Data



Case: TO-220AB

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte Tin-Plated Leads, Solderability-per MIL-STD-202, Method 208

TO-220AB

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

BL038N06H

TO-220AB

50 pcs / Tube

038N06H

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

V_DSS

Value

Unit

Gate-to-Source Voltage

V_GSS

±20

Continuous Drain Current (T_C= 25°C, Silicon Limited)

Continuous Drain Current (T_C= 25°C, Package Limited)

Continuous Drain Current (T_C= 100°C)

Continuous Drain Current (T_A= 25°C) ^*1

Continuous Drain Current (T_A= 100°C) ^*1

Pulsed Drain Current (t_p= 10μs, T_C= 25°C)

Single Pulse Avalanche Energy ^*4

147

120

I_D

104

I_DM

E_AS

P_D

480

635

°C

Power Dissipation (T_C= 25°C)

176

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 to +175

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

0.8

0.85

°C /W

MTM1190A: May 2023 [2.0]

www.gmesemi.com

12 3 4 5

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