Datasheet > BL038N06TH

BL038N06TH

更新时间： 2024-06-27 12:11:57

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	560K
描述
60V, N Channel MOSFETs

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中文翻译

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数据手册

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BL038N06TH 数据手册

N-Channel Enhancement Mode MOSFET

BL038N06TH

Features



Super low gate charge

100% E_ASguaranteed

Excellent Cdv/dt effect decline

Advanced high cell density Trench technology

HBM: JESD22-A114-B: 1C

Mechanical Data



Case: TO-220AB

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matted-Tin plated; Solderable Per MIL-STD-202, Method 208

TO-220AB

Ordering Information

Part Number

Package

TO-220AB

Shipping Quantity

Marking Code

BL038N06TH

50 pcs / Tube

038N06TH

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

V_DSS

Value

Unit

Gate-to-Source Voltage

V_GSS

±20

Continuous Drain Current (T_C= 25°C , Package limited)

Continuous Drain Current (T_C= 25°C , Silicon limited)

Continuous Drain Current (T_C= 100°C , Silicon limited)

Pulsed Drain Current (t_p= 10μs, T_C= 25°C)

Single Pulse Avalanche Energy ^*4

100

I_D

191

100

I_DM

E_AS

P_D

400

140

°C

Power Dissipation (T_C= 25°C)

250

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Air ^*2

R_θJC

0.5

0.8

°C /W

R_θJA

MTM0794A: March 2024 [2.1]

www.gmesemi.com

12 3 4 5

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