Datasheet > BGU8063J

BGU8063J

更新时间： 2022-09-29 11:52:50

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
19页	421K
描述
LOW-NOISE HIGH-LINEARITY AMPLIFI

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BGU8063J 数据手册

NXP Semiconductors

BGU8063

low-noise high-linearity amplifier

8 Limiting values

Table 4.ꢀLimiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_CC

Parameter

Conditions

Min Max

Unit

supply voltage

V_i(CTRL1)

V_i(CTRL2)

P_i(RF)CW

T_stg

input voltage on pin CTRL1

input voltage on pin CTRL2

continuous waveform RF input power

storage temperature

3.6

dBm

°C

-40

150

510

T_j

junction temperature

°C

[1]

power dissipation

T_case≤ 125 °C

V_ESD

electrostatic discharge voltage

Human Body Model (HBM) according to

ANSI/ESDA/JEDEC standard JS-001-2010

Charged Device Model (CDM); according to JEDEC

standard 22-C101B

[1] Case is ground solder pad.

9 Recommended operating conditions

Table 5.ꢀCharacteristics

Symbol

Parameter

Conditions

Min Typ

Max Unit

V_CC

supply voltage

4.75

5.25

Z₀

characteristic impedance

Ω

10 Thermal characteristics

Table 6.ꢀThermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

[1] [2]

R_th(j-case)

thermal resistance from junction to case

K/W

[1] Case is ground solder pad.

[2] Thermal resistance measured using infrared measurement technique, device mounted on application board and placed in still air.

11 Functional description

Table 7.ꢀControl truth table

V_CC= 5 V; T_amb= 25 °C.

Control signal setting ^[1]

Mode of operation

LNA

CTRL1

LOW

CTRL2

HIGH

LOW

bypass

disable

HIGH

LOW

disable

enable

off

HIGH

LOW

disable

off

[1] A logic LOW is the result of an input voltage on that specific pin between -0.3 V and 0.7 V

A logic HIGH is the result of an input voltage on the specific pin between 1.2 V and 3.6 V

BGU8063

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 3.1 — 10 February 2021

4 / 19

1 2 345 6 7...19

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