Philips Semiconductors
Product specification
860 MHz, 17 dB gain power doubler amplifier
BGD885
CHARACTERISTICS
Table 1 Bandwidth 40 to 860 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω
SYMBOL
PARAMETER
CONDITIONS
f = 50 MHz
MIN.
16.5
MAX.
17.5
UNIT
dB
Gp
SL
FL
power gain
slope cable equivalent
flatness of frequency response
input return losses
f = 40 to 860 MHz
f = 40 to 860 MHz
f = 40 MHz; note 1
f = 800 to 860 MHz
f = 40 MHz; note 1
f = 800 to 860 MHz
note 2
0.2
−
1.6
±0.5
−
dB
dB
S11
20
10
20
10
−
dB
−
dB
S22
output return losses
−
dB
−
dB
d2
second order distortion
output voltage
−53
−
dB
Vo
dim = −60 dB; note 3
64
63
−
dBmV
dBmV
dB
d
im = −60 dB; note 4
−
F
noise figure
f = 50 MHz
f = 550 MHz
f = 650 MHz
f = 750 MHz
f = 860 MHz
note 5
8
−
8
dB
−
8
dB
−
8
dB
−
8
dB
Itot
total current consumption (DC)
−
450
mA
Notes
1. Decrease per octave of 1.5 dB.
2. Vp = 59 dBmV at fp = 349.25 MHz;
Vq = 59 dBmV at fq = 403.25 MHz;
measured at fp + fq = 752.5 MHz.
3. Measured according to DIN45004B:
fp = 341.25 MHz; Vp = Vo;
fq = 348.25 MHz; Vq = Vo −6 dB;
fr = 350.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 339.25 MHz.
4. Measured according to DIN45004B:
fp = 851.25 MHz; Vp = Vo;
fq = 858.25 MHz; Vq = Vo −6 dB;
fr = 860.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 849.25 MHz.
5. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
2001 Nov 02
3