Datasheet > BGD885_15

BGD885_15

更新时间： 2022-02-26 12:57:38

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
8页	57K
描述
860 MHz, 17 dB gain power doubler amplifier

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BGD885_15 数据手册

Philips Semiconductors

Product speciﬁcation

860 MHz, 17 dB gain power doubler ampliﬁer

BGD885

FEATURES

PINNING - SOT115D

• Excellent linearity

DESCRIPTION

• Extremely low noise

input

• Silicon nitride passivation

• Rugged construction

2, 3, 5, 6, 7 common

10 V, 200 mA supply terminal

• Gold metallization ensures excellent reliability.

+V_B

output

DESCRIPTION

Hybrid amplifier module for CATV/MATV systems

operating over a frequency range of 40 to 860 MHz at a

voltage supply of 24 V (DC).

handbook, halfpage

Side view

MBK049

Fig.1 Simplified outline.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

f = 50 MHz

V_B= 24 V

MIN.

16.5

MAX.

UNIT

G_p

I_tot

power gain

total current consumption (DC)

17.5

450

−

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER

MIN.

MAX.

UNIT

V_B

V_i

DC supply voltage

RF input voltage

−

dBmV

°C

T_stg

T_mb

storage temperature

−40

−20

+100

operating mounting base temperature

°C

2001 Nov 02

123 4 5 6 7 8

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