Philips Semiconductors
Product specification
750 MHz, 20 dB gain power doubler amplifier
BGD704
Table 2 Bandwidth 40 to 600 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω
SYMBOL
PARAMETER
power gain
CONDITIONS
f = 50 MHz
MIN.
19.5
TYP.
20
MAX.
UNIT
dB
Gp
20.5
−
f = 600 MHz
20
0
20.7
−
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
SL
FL
slope cable equivalent
flatness of frequency response
input return losses
f = 40 to 600 MHz
f = 40 to 600 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 600 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 600 MHz
f = 50 MHz
2
−
−
±0.3
−
S11
20
19
18
17
20
19
18
17
−45
−
31
29
25
21
26
27
26
24
−
−
−
−
S22
output return losses
−
−
−
−
S21
phase response
+45
−64
CTB
composite triple beat
85 channels flat; Vo = 44 dBmV;
measured at 595.25 MHz
−65
Xmod
CSO
cross modulation
85 channels flat; Vo = 44 dBmV;
measured at 55.25 MHz
−
−
−65
−66
−64
−58
dB
dB
composite second order distortion 85 channels flat; Vo = 44 dBmV;
measured at 596.5 MHz
d2
Vo
F
second order distortion
output voltage
note 1
−
−
−68
−
dB
dim = −60 dB; note 2
see Table 1
note 3
63
−
−
dBmV
dB
noise figure
−
−
Itot
total current consumption (DC)
−
425
435
mA
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 541.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 596.5 MHz.
2. Measured according to DIN45004B:
fp = 590.25 MHz; Vp = Vo;
fq = 597.25 MHz; Vq = Vo −6 dB;
fr = 599.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 588.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
2001 Nov 02
4