Datasheet > BGD704_15

BGD704_15

更新时间： 2022-02-26 12:57:37

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
12页	65K
描述
750 MHz, 20 dB gain power doubler amplifier

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BGD704_15 数据手册

Philips Semiconductors

Product speciﬁcation

750 MHz, 20 dB gain power doubler ampliﬁer

BGD704

FEATURES

PINNING - SOT115J

• Excellent linearity

DESCRIPTION

alfpage

• Extremely low noise

• Silicon nitride passivation

• Rugged construction

input

common

+V_B

• Gold metallization ensures

excellent reliability.

Side view

MSA319

common

output

Fig.1 Simplified outline.

APPLICATIONS

• CATV systems in the frequency

range of 40 to 750 MHz.

DESCRIPTION

Hybrid amplifier module operating at

a voltage supply of 24 V (DC)

encapsulated in a SOT115J package.

QUICK REFERENCE DATA

SYMBOL

G_p

PARAMETER

power gain

CONDITIONS

MIN.

19.5

MAX.

20.5

UNIT

f = 50 MHz

f = 750 MHz

V_B= 24 V

−

I_tot

total current consumption (DC)

−

435

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER

MIN.

MAX.

UNIT

V_i

RF input voltage

−

dBmV

°C

T_stg

T_mb

storage temperature

−40

−20

+100

operating mounting base temperature

°C

2001 Nov 02

123 4 5 6 7...12

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