Datasheet > BGD704_15

BGD704_15

更新时间： 2022-02-26 12:57:37

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
12页	65K
描述
750 MHz, 20 dB gain power doubler amplifier

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BGD704_15 数据手册

Philips Semiconductors

Product speciﬁcation

750 MHz, 20 dB gain power doubler ampliﬁer

BGD704

CHARACTERISTICS

Table 1 Bandwidth 40 to 750 MHz; V_B= 24 V; T_mb= 35 °C; Z_S= Z_L= 75 Ω

SYMBOL

PARAMETER

power gain

CONDITIONS

f = 50 MHz

MIN.

19.5

TYP.

MAX.

UNIT

G_p

20.5

−

f = 750 MHz

deg

slope cable equivalent

ﬂatness of frequency response

input return losses

f = 40 to 750 MHz

f = 40 to 80 MHz

f = 80 to 160 MHz

f = 160 to 320 MHz

f = 320 to 640 MHz

f = 640 to 750 MHz

f = 40 to 80 MHz

f = 80 to 160 MHz

f = 160 to 320 MHz

f = 320 to 640 MHz

f = 640 to 750 MHz

f = 50 MHz

−

±0.2

−

±0.5

−

S₁₁

−45

−

S₂₂

output return losses

−

S₂₁

phase response

+45

−57

CTB

composite triple beat

110 channels ﬂat;

V_o= 44 dBmV; measured at

745.25 MHz

−58

X_mod

CSO

cross modulation

110 channels ﬂat;

V_o= 44 dBmV; measured at

55.25 MHz

−

−63

−61

−56

composite second order distortion 110 channels ﬂat;

V_o= 44 dBmV; measured at

746.5 MHz

d₂

V_o

second order distortion

output voltage

note 1

−

−75

63.5

4.5

−

−66

−

d_im= −60 dB; note 2

f = 50 MHz

f = 450 MHz

f = 550 MHz

f = 600 MHz

f = 750 MHz

note 3

60.5

−

dBmV

noise ﬁgure

−

6.5

−

6.5

425

8.5

435

I_tot

total current consumption (DC)

−

Notes

1. f_p= 55.25 MHz; V_p= 44 dBmV; f_q= 691.25 MHz; V_q= 44 dBmV; measured at f_p+ f_q= 746.5 MHz.

2. Measured according to DIN45004B:

f_p= 740.25 MHz; V_p= V_o;

f_q= 747.25 MHz; V_q= V_o−6 dB;

f_r= 749.25 MHz; V_r= V_o−6 dB;

measured at f_p+ f_q− f_r= 738.25 MHz.

3. The module normally operates at V_B= 24 V, but is able to withstand supply transients up to 30 V.

2001 Nov 02

1 234 5 6 7...12

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