Datasheet > BGA2816

BGA2816

更新时间： 2024-10-28 14:50:27

品牌	Logo	应用领域
恩智浦 - NXP		放大器射频微波功率放大器
页数	文件大小	规格书
2页	279K
描述
RF/Microwave Amplifier, 0 MHz - 2200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, PLASTIC, SC-88, SOT-363, SMD, 6 PIN

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技术参数
数据手册

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BGA2816 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.71
Is Samacsys：	N	其他特性：	LOW NOISE
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	24.8 dB	JESD-609代码：	e3
最大工作频率：	2200 MHz	最小工作频率：
最高工作温度：	85 °C	最低工作温度：	-40 °C
射频/微波设备类型：	WIDE BAND LOW POWER	端子面层：	Tin (Sn)
Base Number Matches：	1

BGA2816 数据手册

NXP satellite LNB devices

BFU725F and BGA28xx

Complete satellite portfolio

for all LNB architectures

Designed for use in LNAs, mixers, and IF ampliﬁers, these robust, small-footprint products are

manufactured in NXP’s groundbreaking QUBiC4X SiGe:C and QUBiC4+ process technology and

are the latest additions to NXP’s leading portfolio for satellite LNB.

BFU725F RF transistor

BFU725F as 2^ndor 3^rdstage LNA in Ku-band LNB

The BFU725F is an RF transistor that can be used in the LNA

part and as a mixer for a DBS LNB. In either application,

it delivers low power consumption, good noise and linearity,

and the lowest cost compared to GaAs pHEMT solution.



Power consumption: 11 mA at 5 V

Single supply: 3, 5, or 6 V

Noise, SSB: typically 1.3 dB

Linearity: better than 10 dBm OIP3

Gain, SSB: typically 10.5 dB

BFU725F as mixer in Ku-band LNB

In/Out match: better than 7/12 dB

Broadband unconditionally stable



Power consumption: 2 mA at 5 V

Single supply: 3, 5, or 6 V

Noise, Single Side Band: 7 dB (including BPF)

Linearity: better than 0 dBm OIP3

Gain, SSB: 2 dB (including BPF)

BFU725F as LNA for C-band LNB



Power consumption: 7 mA at 5 V

Single supply: 5 or 6 V

RF/LO/IF Match: better than 12/15/18 dB

Broadband unconditionally stable

LO-RF isolation better than 18 dB

Noise: 0.65 dB

Linearity: better than 10 dBm OIP3

Gain: 15 dB

In/Out Match: better than 10 dB

Broadband unconditionally stable

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