是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.66 |
JESD-609代码: | e3 | 射频/微波设备类型: | WIDE BAND MEDIUM POWER |
端子面层: | Tin (Sn) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BGA3018,115 | NXP |
获取价格 |
BGA3018 - 1 GHz 18 dB gain wideband amplifier MMIC SOT-89 3-Pin | |
BGA3022 | NXP |
获取价格 |
RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER | |
BGA3023 | NXP |
获取价格 |
RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER | |
BGA3031 | NXP |
获取价格 |
DOCSIS 3.0 upstream amplifier | |
BGA3031J | NXP |
获取价格 |
BGA3031 - DOCSIS 3.0 plus upstream amplifier QFN 20-Pin | |
BGA310 | INFINEON |
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Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 | |
BGA312 | INFINEON |
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Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 | |
BGA312E6327 | INFINEON |
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Wide Band Low Power Amplifier, 0MHz Min, 2000MHz Max, | |
BGA3131 | NXP |
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DOCSIS 3.0 Plus Upstream Amplifier|DOCSIS 3.1 Upstream Amplifier | |
BGA318 | INFINEON |
获取价格 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 1 |