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BFL4001_12 PDF预览

BFL4001_12

更新时间: 2024-11-18 08:52:31
品牌 Logo 应用领域
三洋 - SANYO 开关通用开关
页数 文件大小 规格书
5页 329K
描述
N-Channel Silicon MOSFET General-Purpose Switching Device Applications

BFL4001_12 数据手册

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Ordering number : ENA1638A  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
BFL4001  
Features  
Low ON-resistance  
High-speed switching  
Avalanche resistance guarantee  
10V drive  
Specications  
Absolute Maximum Ratings  
at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
900  
±30  
6.5  
4.1  
13  
DSS  
V
V
GSS  
*1  
I
Limited only by maximum temperature Tch=150 C  
A
°
Dc  
Drain Current (DC)  
I
*2  
Tc=25 C (SANYOs ideal heat dissipation condition)*3  
A
°
Dpack  
Drain Current (Pulse)  
Allowable Power Dissipation  
I
PW 10 s, duty cycle 1%  
A
μ
DP  
2.0  
37  
W
W
P
D
Tc=25 C (SANYOs ideal heat dissipation condition)*3  
°
Channel Temperature  
Tch  
150  
C
C
°
Storage Temperature  
Tstg  
--55 to +150  
°
Avalanche Energy (Single Pulse) *4  
Avalanche Current *5  
E
223  
6.5  
mJ  
A
AS  
I
AV  
Note : 1 Shows chip capability  
*
2 Package limited  
*
3 SANYO’s condition is radiation from backside.  
*
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.  
4 V =50V, L=10mH, I =6.5A  
*
DD  
AV  
5 L 10mH, single pulse  
*
Package Dimensions  
unit : mm (typ)  
Product & Package Information  
• Package  
: TO-220F-3FS  
7528-001  
• JEITA, JEDEC  
: SC-67  
• Minimum Packing Quantity : 50 pcs./magazine  
4.7  
10.16  
3.18  
2.54  
Marking  
Electrical Connection  
2
FL4001  
1
LOT No.  
2.76  
1.47 MAX  
0.8  
3
1
2
3
0.5  
1 : Gate  
2 : Drain  
3 : Source  
2.54  
2.54  
SANYO : TO-220F-3FS  
http://semicon.sanyo.com/en/network  
22912 TKIM TC-00002729/31010QB TK IM TC-00002256 No.A1638-1/5  

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