Datasheet > BFL4001-1E

BFL4001-1E

更新时间： 2024-11-21 14:48:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	260K
描述
N-Channel Power MOSFET, 900V, 6.5A, 2.7Ω, TO-220F-3FS, TO-220F-3FS, 50-TUBE

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中文翻译

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技术参数
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BFL4001-1E 技术参数

是否无铅：	不含铅	生命周期：	Lifetime Buy
针数：	3	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	Factory Lead Time：	1 week
风险等级：	5.2	Is Samacsys：	N
JESD-609代码：	e3	端子面层：	Tin (Sn)
Base Number Matches：	1

BFL4001-1E 数据手册

Ordering number : ENA1638B

BFL4001

N-Channel Power MOSFET

http://onsemi.com

900V, 6.5A, 2.7 , TO-220F-3FS

Features

•

ON-resistance R (on)=2.1 (typ.)

10V drive

Input capacitance Ciss=850pF (typ.)

•

Speciﬁcations

Absolute Maximum Ratings

at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Symbol

Conditions

Ratings

Unit

900

±30

6.5

4.1

DSS

GSS

Limited only by maximum temperature Tch=150 C

Drain Current (DC)

Tc=25 C (Our ideal heat dissipation condition)*3

Dpack

Drain Current (Pulse)

Allowable Power Dissipation

PW 10 s, duty cycle 1%

≤

2.0

Tc=25 C (Our ideal heat dissipation condition)*3

Channel Temperature

Tch

150

Storage Temperature

Tstg

--55 to +150

Avalanche Energy (Single Pulse) *4

Avalanche Current *5

223

6.5

Note : 1 Shows chip capability

2 Package limited

3 Our condition is radiation from backside.

The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.

4 V =50V, L=10mH, I =6.5A

5 L 10mH, single pulse

≤

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions

unit : mm (typ)

Product & Package Information

• Package

: TO-220F-3FS

7528-001

• JEITA, JEDEC

: SC-67

• Minimum Packing Quantity : 50 pcs./magazine

4.7

10.16

3.18

BFL4001-1E

2.54

Marking

Electrical Connection

FL4001

LOT No.

2.76

1.47 MAX

0.8

0.5

1 : Gate

2 : Drain

3 : Source

2.54

TO-220F-3FS

Semiconductor Components Industries, LLC, 2013

July, 2013

62712 TKIM/22912 TKIM TC-00002729/31010QB TKIM TC-00002256 No. A1638-1/7

12 3 4 5 6 7

中文翻译

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与BFL4001-1E相关器件

型号	品牌	获取价格	描述	数据表
BFL4004	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device Applications
BFL4007	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device Applications
BFL4007-1E	ONSEMI	获取价格	N-Channel Power MOSFET, 600V, 14A, 680mΩ, Single TO-220F-3FS, TO-220F-3FS, 50-TU
BFL4026	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device Applications
BFL4026_12	SANYO	获取价格	General-Purpose Switching Device Applications
BFL4026-1E	ONSEMI	获取价格	N 沟道功率 MOSFET，900V，5A，3.6Ω
BFL4036	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device Applications
BFL4037	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device Applications
BFL4037	ONSEMI	获取价格	Power MOSFET 500 V, 11 A, 430 mOhm Single N-Channel
BFL4037-1E	ONSEMI	获取价格	N-Channel Power MOSFET, 500V, 16A, 430mΩ, Single TO-220F-3FS, TO-220F-3FS, 50-TU

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