生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.29.00.95 |
风险等级: | 5.32 | 雪崩能效等级(Eas): | 241 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 800 V | 最大漏极电流 (Abs) (ID): | 4.3 A |
最大漏极电流 (ID): | 4.3 A | 最大漏源导通电阻: | 2.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 36 W |
最大脉冲漏极电流 (IDM): | 13 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BFL4007 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
BFL4007-1E | ONSEMI |
获取价格 |
N-Channel Power MOSFET, 600V, 14A, 680mΩ, Single TO-220F-3FS, TO-220F-3FS, 50-TU | |
BFL4026 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
BFL4026_12 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
BFL4026-1E | ONSEMI |
获取价格 |
N 沟道功率 MOSFET,900V,5A,3.6Ω | |
BFL4036 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
BFL4037 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
BFL4037 | ONSEMI |
获取价格 |
Power MOSFET 500 V, 11 A, 430 mOhm Single N-Channel | |
BFL4037-1E | ONSEMI |
获取价格 |
N-Channel Power MOSFET, 500V, 16A, 430mΩ, Single TO-220F-3FS, TO-220F-3FS, 50-TU | |
BFL484A | KEMET |
获取价格 |
Bicell Forming and Lamination Machine |