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BFL4026-1E PDF预览

BFL4026-1E

更新时间: 2024-11-22 11:14:27
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 274K
描述
N 沟道功率 MOSFET,900V,5A,3.6Ω

BFL4026-1E 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:1.5雪崩能效等级(Eas):132 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:900 V最大漏极电流 (ID):3.5 A
最大漏源导通电阻:3.6 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):10 A
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

BFL4026-1E 数据手册

 浏览型号BFL4026-1E的Datasheet PDF文件第2页浏览型号BFL4026-1E的Datasheet PDF文件第3页浏览型号BFL4026-1E的Datasheet PDF文件第4页浏览型号BFL4026-1E的Datasheet PDF文件第5页浏览型号BFL4026-1E的Datasheet PDF文件第6页浏览型号BFL4026-1E的Datasheet PDF文件第7页 
Ordering number : ENA1797A  
BFL4026  
N-Channel Power MOSFET  
http://onsemi.com  
Ω
900V, 5A, 3.6 , TO-220F-3FS  
Features  
ON-resistance R (on)=2.8 (typ.)  
10V drive  
Input capacitance Ciss=650pF (typ.)  
Ω
DS  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
900  
±30  
5
DSS  
V
V
GSS  
*1  
I
Limited only by maximum temperature Tch=150 C  
A
°
Dc  
Drain Current (DC)  
I
*2  
Tc=25 C (Our ideal heat dissipation condition)*3  
3.5  
10  
A
°
Dpack  
Drain Current (Pulse)  
Allowable Power Dissipation  
I
PW 10 s, duty cycle 1%  
A
μ
DP  
2.0  
35  
W
W
P
D
Tc=25 C (Our ideal heat dissipation condition)*3  
°
Channel Temperature  
Tch  
150  
C
C
°
°
Storage Temperature  
Tstg  
--55 to +150  
Avalanche Energy (Single Pulse) *4  
Avalanche Current *5  
E
132  
5
mJ  
A
AS  
I
AV  
Note : 1 Shows chip capability  
*
2 Package limited  
*
3 Our condition is radiation from backside.  
*
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.  
4 V =50V, L=10mH, I =5A (Fig.1)  
*
*
DD  
5 L 10mH, single pulse  
AV  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating  
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  
Package Dimensions  
unit : mm (typ)  
Product & Package Information  
• Package  
: TO-220F-3FS  
7528-001  
• JEITA, JEDEC  
: SC-67  
• Minimum Packing Quantity : 50 pcs./magazine  
4.7  
10.16  
3.18  
BFL4026-1E  
2.54  
Marking  
Electrical Connection  
2
FL4026  
1
LOT No.  
2.76  
1.47 MAX  
0.8  
3
1
2
3
0.5  
1 : Gate  
2 : Drain  
3 : Source  
2.54  
2.54  
TO-220F-3FS  
Semiconductor Components Industries, LLC, 2013  
July, 2013  
71112 TKIM/70710QB TKIM TC-00002399 No. A1797-1/7  

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