BFG310

更新时间： 2024-10-01 03:21:47

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
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描述
NPN 14 GHz wideband transistor

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BFG310 数据手册

BFG310/XR

NPN 14 GHz wideband transistor

Rev. 01 — 2 February 2005

Product data sheet

1. Product proﬁle

1.1 General description

NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package.

1.2 Features

■ High power gain

■ Low noise ﬁgure

■ High transition frequency

■ Gold metallization ensures excellent reliability

1.3 Applications

■ Intended for Radio Frequency (RF) front end applications in the GHz range, such as:

◆ analog and digital cellular telephones

◆ cordless telephones (Cordless Telephone (CT), Personal Communication

Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)

◆ radar detectors

◆ pagers

◆ Satellite Antenna TeleVision (SATV) tuners

◆ repeater ampliﬁers in ﬁber-optic systems

1.4 Quick reference data

Table 1:

Quick reference data

Symbol Parameter

Conditions

open emitter

Min

Typ

Max Unit

V_CBO

V_CEO

I_C

collector-base voltage

collector-emitter voltage open base

collector current (DC)

200

[1]

P_tot

total power dissipation

DC current gain

T_sp≤ 145 °C

h_FE

I_C= 5 mA; V_CE= 3 V;

100

T_j= 25 °C

C_CBS

f_T

collector-base

capacitance

V_CB= 5 V; f = 1 MHz;

emitter grounded

0.17 0.3

transition frequency

I_C= 5 mA; V_CE= 3 V;

GHz

f = 1 GHz; T_amb= 25 °C

12 3 4 5 6 7...12

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