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BFG325W-XR PDF预览

BFG325W-XR

更新时间: 2024-10-01 03:15:51
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
12页 85K
描述
NPN 14 GHz wideband transistor

BFG325W-XR 数据手册

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BFG325W/XR  
NPN 14 GHz wideband transistor  
Rev. 01 — 2 February 2005  
Product data sheet  
1. Product profile  
1.1 General description  
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.  
1.2 Features  
High power gain  
Low noise figure  
High transition frequency  
Gold metallization ensures excellent reliability  
1.3 Applications  
Intended for Radio Frequency (RF) front end applications in the GHz range, such as:  
analog and digital cellular telephones  
cordless telephones (Cordless Telephone (CT), Personal Communication  
Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)  
radar detectors  
pagers  
Satellite Antenna TeleVision (SATV) tuners  
1.4 Quick reference data  
Table 1:  
Quick reference data  
Symbol Parameter  
Conditions  
open emitter  
Min  
Typ  
Max Unit  
VCBO  
VCEO  
IC  
collector-base voltage  
-
-
15  
6
V
collector-emitter voltage open base  
collector current (DC)  
-
-
V
-
-
35  
mA  
mW  
[1]  
Ptot  
total power dissipation  
DC current gain  
Tsp 90 °C  
-
-
210  
200  
hFE  
IC = 15 mA; VCE = 3 V;  
60  
100  
Tj = 25 °C  
CCBS  
fT  
collector-base  
capacitance  
VCB = 5 V; f = 1 MHz;  
emitter grounded  
-
-
-
0.27 0.4  
pF  
transition frequency  
IC = 15 mA; VCE = 3 V;  
f = 1 GHz; Tamb = 25 °C  
14  
-
-
GHz  
dB  
Gmax  
maximum power gain[2] IC = 15 mA; VCE = 3 V;  
18.3  
f = 1.8 GHz; Tamb = 25 °C  

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