生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.21.00.95 |
风险等级: | 5.84 | 配置: | SINGLE |
最小漏源击穿电压: | 30 V | FET 技术: | JUNCTION |
最高频带: | VERY HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BF-56056015% | VISHAY |
获取价格 |
General Purpose Inductor, 560uH, 15%, 1 Element, Ferrite-Core | |
BF562 | INFINEON |
获取价格 |
npn silicon rf transistor | |
BF-565615% | VISHAY |
获取价格 |
General Purpose Inductor, 56uH, 15%, 1 Element, Ferrite-Core | |
BF568 | INFINEON |
获取价格 |
PNP SILICON PLANAR TRANSISTOR | |
BF569 | YAGEO |
获取价格 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili | |
BF569 | VISHAY |
获取价格 |
Silicon PNP Planar RF Transistor | |
BF569 | INFINEON |
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PNP Silicon RF Transistor (fOR OSCILLATORS, MIXERS AND SELF-OSCILLATING MIXER STAGES IN uh | |
BF569 | NXP |
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暂无描述 | |
BF569 | TEMIC |
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RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili | |
BF569E6327 | INFINEON |
获取价格 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili |