Datasheet > BF5030R-E6327

BF5030R-E6327

更新时间： 2024-10-31 03:26:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	579K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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BF5030R-E6327 数据手册

BF5030...

Silicon N-Channel MOSFET Tetrode

• Designed for input stages of UHF- and

VHF-tuners with AGC function

• Supporting 5 V operations and

power saving 3 V operations

• Integrated ESD gate protection diodes

• Very low noise figure

• High gain, high forward transadmittance

• Very good cross modulation at gain reduction

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Drain

HF Output

+ DC

AGC

Input

R_G1

GND

V_GG

EHA07461

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Package

SOT143

SOT143R 1=D

SOT343 1=D

Pin Configuration

Marking

KXs

BF5030

BF5030R

BF5030W

1=S

2=D

2=S

3=G2 4=G1

3=G1 4=G2

KXs

2009-05-05

12 3 4 5 6 7...13

中文翻译

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