是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.15 |
配置: | SINGLE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (ID): | 0.03 A | FET 技术: | JUNCTION |
最高频带: | VERY HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
BF545A,215 | NXP |
功能相似 ![]() |
N-channel FET TO-236 3-Pin |
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BF545A | NXP |
功能相似 ![]() |
N-channel silicon junction field-effect transistors |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BF510_15 | JMNIC |
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N-channel silicon field-effect transistors |
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BF510_2015 | JMNIC |
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N-channel silicon field-effect transistors |
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BF510-T | NXP |
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TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal |
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BF510T/R | ETC |
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TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 700UA I(DSS) | TO-236 |
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BF510-TAPE-13 | NXP |
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TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal |
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BF510-TAPE-7 | NXP |
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TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal |
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BF510TRL | YAGEO |
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RF Small Signal Field-Effect Transistor, 1-Element, Silicon |
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BF510TRL13 | NXP |
获取价格 |
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal |
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BF510TRL13 | YAGEO |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Silicon |
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BF511 | NXP |
获取价格 |
N-channel silicon field-effect transistors |
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