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BF245B PDF预览

BF245B

更新时间: 2024-09-12 22:39:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器小信号场效应晶体管射频小信号场效应晶体管
页数 文件大小 规格书
3页 26K
描述
N-Channel Amplifiers

BF245B 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.22
Samacsys Confidence:Samacsys Status:Released
Samacsys PartID:279191Samacsys Pin Count:3
Samacsys Part Category:Undefined or MiscellaneousSamacsys Package Category:Other
Samacsys Footprint Name:TO127P254X732-3Samacsys Released Date:2017-01-11 16:35:06
Is Samacsys:N配置:SINGLE
FET 技术:JUNCTION最高频带:ULTRA HIGH FREQUENCY BAND
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

BF245B 数据手册

 浏览型号BF245B的Datasheet PDF文件第2页浏览型号BF245B的Datasheet PDF文件第3页 
BF245A/BF245B/BF245C  
N-Channel Amplifiers  
This device is designed for VHF/UHF amplifiers.  
Sourced from process 50.  
TO-92  
1
1. Gate 2. Source 3. Drain  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
30  
Units  
V
V
V
Drain-Gate Voltage  
Gate-Source Voltage  
Forward Gate Current  
DG  
-30  
V
GS  
D
I
10  
mA  
GF  
P
Total Device Dissipation @T =25°C  
350  
mW  
A
Derate above 25°C  
2.8  
mW/°C  
°C  
T
T
Operating and Storage Junction Temperature Range  
- 55 ~ 150  
J, STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
Off Characteristics  
V
V
Gate-Source Breakdown Voltage  
V
V
= 0, I = 1µA  
-30  
V
V
(BR)GSS  
GS  
DS  
DS  
G
Gate-Source  
BF245A  
BF245B  
BF245C  
= 15V, I = 200µA  
-0.4  
-1.6  
-3.2  
-2.2  
-3.8  
-7.5  
D
V
(off)  
Gate-Source Cut-off Voltage  
Gate Reverse Current  
V
V
= 15V, I = 10nA  
-0.5  
-8  
-5  
V
GS  
DS  
GS  
D
I
= -20V, V = 0  
nA  
GSS  
GS  
On Characteristics  
I
Zero-Gate Voltage Drain Current  
DSS  
BF245A  
BF245B  
BF245C  
V
V
= 15V, V = 0  
2
6
12  
6.5  
15  
25  
mA  
GS  
GS  
GS  
On Characteristics  
g
Common Source Forward  
Transconductance  
= 15V, V = 0, f = 1KHz  
3
6.5  
mmhos  
fs  
GS  
©2003 Fairchild Semiconductor Corporation  
Rev. A1, June 2003  

BF245B 替代型号

型号 品牌 替代类型 描述 数据表
BF244C FAIRCHILD

类似代替

N-Channel RF Amplifier
BF244B FAIRCHILD

类似代替

N-Channel RF Amplifier

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