Datasheet > BDT41B

BDT41B

更新时间： 2024-02-07 06:01:41

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	117K
描述
isc Silicon NPN Power Transistors

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BDT41B 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

BDT41/A/B/C

DESCRIPTION

·DC Current Gain -h_FE= 30(Min)@ I_C= 0.3A

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 40V(Min)- BDT41; 60V(Min)- BDT41A

80V(Min)- BDT41B; 100V(Min)- BDT41C

·Complement to Type BDT42/42A/42B/42C

APPLICATIONS

·Designed for use in general purpose amplifer and switching

applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BDT41

BDT41A

BDT41B

BDT41C

BDT41

100

120

140

V_CBO

Collector-Base Voltage

BDT41A

BDT41B

BDT41C

V_CEO

Collector-Emitter Voltage

Emitter-Base Voltage

100

V_EBO

I_C

I_CM

I_B

Collector Current-Continuous

Collector Current-Peak

Base Current

Collector Power Dissipation

T_C=25℃

P_C

T_j

℃

Junction Temperature

150

-65~150

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

℃/W

Thermal Resistance,Junction to Case

1.92

R_{th j-c}

Thermal Resistance,Junction to Ambient

R_{th j-a}

isc Website：www.iscsemi.cn

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