Datasheet > BDT41F

BDT41F

更新时间： 2024-09-24 06:41:59

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	112K
描述
isc Silicon NPN Power Transistors

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数据手册

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BDT41F 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

BDT41F/AF/BF/CF

DESCRIPTION

·DC Current Gain -h_FE= 30(Min)@ I_C= 0.3A

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 40V(Min)- BDT41F; 60V(Min)- BDT41AF

80V(Min)- BDT41BF; 100V(Min)- BDT41CF

·Complement to Type BDT42F/AF/BF/CF

APPLICATIONS

·Designed for use in general purpose amplifer and switching

applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BDT41F

BDT41AF

BDT41BF

BDT41CF

BDT41F

100

120

140

V_CBO

Collector-Base Voltage

BDT41AF

BDT41BF

BDT41CF

Collector-Emitter

Voltage

V_CEO

100

V_EBO

I_C

I_CM

I_B

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current

Collector Power Dissipation

T_C=25℃

P_C

T_j

℃

Junction Temperature

150

-65~150

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

6.3

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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