Datasheet > BDT42AF

BDT42AF

更新时间： 2024-09-24 06:41:59

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	112K
描述
isc Silicon PNP Power Transistors

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BDT42AF 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistors

BDT42F/AF/BF/CF

DESCRIPTION

·DC Current Gain -h_FE= 30(Min)@ I_C= -0.3A

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= -40V(Min)- BDT42F; -60V(Min)- BDT42AF

-80V(Min)- BDT42BF; -100V(Min)- BDT42CF

·Complement to Type BDT41F/AF/BF/CF

APPLICATIONS

·Designed for use in general purpose amplifer and switching

applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

-80

UNIT

BDT42F

BDT42AF

BDT42BF

BDT42CF

BDT42F

-100

-120

-140

-40

V_CBO

Collector-Base Voltage

BDT42AF

BDT42BF

BDT42CF

-60

Collector-Emitter

Voltage

V_CEO

-80

-100

-5

V_EBO

I_C

I_CM

I_B

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current

-6

-10

-3

Collector Power Dissipation

T_C=25℃

P_C

T_j

℃

Junction Temperature

150

-65~150

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

6.3

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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BDT42F	ISC	获取价格	isc Silicon PNP Power Transistors
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