Datasheet > BDC01D/D

BDC01D/D

更新时间： 2024-11-13 23:35:11

品牌	Logo	应用领域
其他 - ETC		晶体放大器晶体管
页数	文件大小	规格书
4页	70K
描述
One Watt Amplifier Transistor

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BDC01D/D 数据手册

ON Semiconductort

BDC01D

One Watt Amplifier Transistor

NPN Silicon

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

BDC01D

100

Unit

Vdc

Adc

CEO

CBO

EBO

100

5.0

Collector Current — Continuous

0.5

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.0

8.0

Watts

mW/°C

CASE 29–10, STYLE 14

TO–92 (TO–226AE)

Total Device Dissipation @ T = 25°C

2.5

Watts

mW/°C

Derate above 25°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

COLLECTOR

Symbol

Max

125

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

BASE

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symb

Min

Max

Unit

EMITTER

OFF CHARACTERISTICS

Collector–Emitter Voltage

(I = 10 mA, I = 0)

100

—

Vdc

mAdc

nAdc

(BR)C

Collector Cutoff Current

(V = 100 V, I = 0)

0.1

100

CBO

Emitter Cutoff Current

(I = 0, V = 5.0 V)

—

EBO

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)

Characteristic

ON CHARACTERISTICS

Symbol

Min

Max

Unit

DC Current Gain

—

(I = 100 mA, V = 1.0 V)

400

—

(I = 500 mA, V = 2.0 V)

(1)

Collector–Emitter Saturation Voltage

(I = 1000 mA, I = 100 mA)

—

0.7

Vdc

CE(sat)

(1)

Collector–Emitter On Voltage

(I = 1000 mA, V = 1.0 V)

BE(on)

—

1.2

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth Product

—

MHz

(I = 200 mA, V = 5.0 V, f = 20 MHz)

Output Capacitance

(V = 10 V, I = 0, f = 1.0 MHz)

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle 2.0%.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

March, 2001 – Rev. 1

BDC01D/D

12 3 4

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与BDC01D/D相关器件

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BDC01DRL	ONSEMI	获取价格	500mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AE, 3 PIN
BDC01DRL	MOTOROLA	获取价格	500mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
BDC01DRL1	ONSEMI	获取价格	500mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-10, TO-226AA, 3 PIN
BDC01DRL1	MOTOROLA	获取价格	500mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
BDC01DRL1	ROCHESTER	获取价格	500mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-10, TO-226AA, 3 PIN
BDC01DRL1G	ROCHESTER	获取价格	500mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, LEAD FREE, CASE 29-10, TO-226AA, 3 P
BDC01DRL1G	ONSEMI	获取价格	One Watt Amplifier Transistor
BDC01DRLRA	ONSEMI	获取价格	500mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AE, 3 PIN
BDC01DRLRA	MOTOROLA	获取价格	500mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
BDC01DRLRB	MOTOROLA	获取价格	暂无描述