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BDC01DRLRM PDF预览

BDC01DRLRM

更新时间: 2024-11-14 13:01:31
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体放大器晶体管
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4页 133K
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BDC01DRLRM 数据手册

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Order this document  
by BDC01D/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR  
2
3
BASE  
1
2
3
1
EMITTER  
CASE 29–05, STYLE 14  
TO–92 (TO–226AE)  
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
BDC01D  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
V
CBO  
V
EBO  
100  
100  
5.0  
0.5  
Collector Current — Continuous  
I
C
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.0  
8.0  
Watts  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
2.5  
20  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
125  
50  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
CollectorEmitter Voltage  
V
100  
0.1  
100  
Vdc  
Adc  
(BR)CEO  
(I = 10 mA, I = 0)  
C
B
Collector Cutoff Current  
(V = 100 V, I = 0)  
I
CBO  
CB  
Emitter Cutoff Current  
(I = 0, V = 5.0 V)  
E
I
nAdc  
EBO  
C
EB  
Motorola, Inc. 1996

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