Datasheet > BDB02CRL1

BDB02CRL1

更新时间： 2024-11-05 03:03:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
23页	334K
描述
500mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AE, 3 PIN

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BDB02CRL1 数据手册

SEMICONDUCTOR TECHNICAL DATA

PNP Silicon

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Value

–80

Unit

CASE 29–05, STYLE 1

TO–92 (TO–226AE)

CEO

Vdc

Adc

–80

CES

EBO

–5.0

–0.5

Collector Current — Continuous

Total Device Dissipation

1.0

8.0

Watt

mW/°C

@ T = 25°C

Derate above 25°C

Total Device Dissipation

2.5

Watt

mW/°C

@ T = 25°C

Derate above 25°C

Operating and Storage Junction

Temperature Range

T , T

J stg

–55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

125

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Collector–Emitter Voltage

Vdc

Adc

(BR)CEO

(I = –10 mA, I = 0)

–80

—

Collector Cutoff Current

(V = –80 V, I = 0)

CBO

—

–0.1

Emitter Cutoff Current (I = 0, V

= –5.0 V)

–100

nAdc

EBO

ON CHARACTERISTICS

DC Current Gain

—

(I = –100 mA, V

= –1.0 V)

= –2.0 V)

400

—

(I = –500 mA, V

(1)

Collector–Emitter Saturation Voltage (I = –1000 mA, I = –100 mA)

CE(sat)

—

–0.7

–1.2

Vdc

(1)

Collector–Emitter On Voltage (I = –1000 mA, V

= –1.0 V)

BE(on)

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product (I = –200 mA, V

= –5.0 V, f = 20 MHz)

—

MHz

Output Capacitance (V

= –10 V, I = 0, f = 1.0 MHz)

1. Pulse Test: Pulse Width

300 s, Duty Cycle 2.0%.

REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–225

12 3 4 5 6 7...23

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