生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.46 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 60 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 25 | JEDEC-95代码: | TO-202 |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | PNP |
功耗环境最大值: | 8 W | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 75 MHz |
VCEsat-Max: | 0.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BD828-10 | NXP |
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TRANSISTOR 1 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-202, BIP General Purpose Power | |
BD828-16 | NXP |
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TRANSISTOR 1 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-202, BIP General Purpose Power | |
BD828-6 | ETC |
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TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1.5A I(C) | TO-202 | |
BD829 | NXP |
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NPN power transistors | |
BD829 | CDIL |
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Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-202, Plastic/ | |
BD829-10 | NXP |
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TRANSISTOR 1 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-202, BIP General Purpose Power | |
BD829-16 | NXP |
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TRANSISTOR 1 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-202, BIP General Purpose Power | |
BD829-6 | ETC |
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TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 2A I(C) | TO-202 | |
BD82A16MUF-M (开发中) | ROHM |
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This IC is a white LED driver for LCD backlig | |
BD82A26MUF-M (新产品) | ROHM |
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该IC是一款适用于LCD背光的白色LED驱动器,内置6通道的LED驱动用电流驱动器,非常适 |