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BD787

更新时间： 2024-01-22 05:11:53

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	151K
描述
POWER TRANSISTORS COMPLEMENTARY SILICON

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*ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)

C

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

V

60

—

—

Vdc

CEO(sus)

(I = 10 mAdc, I = 0)

C

B

Collector Cutoff Current

I

100

µAdc

CEO

(V

CE

(V

CE

= 20 Vdc, I = 0)

B

= 30 Vdc, I = 0)

B

Collector Cutoff Current

I

CEX

(V

CE

(V

CE

= 80 Vdc, V

= 40 Vdc, V

= 1.5 Vdc)

= 1.5 Vdc, T = 125°C)

—

—

1.0

0.1

µAdc

mAdc

BE(off)

BE(off)

C

Emitter Cutoff Current

(V = 6.0 Vdc, I = 0)

I

—

1.0

µAdc

EBO

EB

C

ON CHARACTERISTICS(1)

DC Current Gain

h

FE

—

(I = 200 mAdc, V

CE

= 3.0 Vdc)

40

25

20

5.0

250

—

—

C

(I = 1.0 Adc, V

= 3.0 Vdc)

= 3.0 Vdc)

= 3.0 Vdc)

C

CE

CE

CE

(I = 2.0 Adc, V

C

(I = 4.0 Adc, V

—

C

Collector–Emitter Saturation Voltage

(I = 500 mAdc, I = 50 mAdc)

V

Vdc

CE(sat)

—

—

—

—

0.4

0.6

0.8

2.5

C

B

(I = 1.0 Adc, I = 100 mAdc)

C

C

B

B

B

(I = 2.0 Adc, I = 200 mAdc)

(I = 4.0 Adc, I = 800 mAdc)

C

Base–Emitter Saturation Voltage

(I = 2.0 Adc, I = 200 mAdc)

V

—

2.0

Vdc

Vdc

BE(sat)

C

B

Base–Emitter On Voltage

(I = 2.0 Adc, V = 3.0 Vdc)

V

BE(on)

—

1.8

C

CE

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

f

50

—

MHz

pF

T

(I = 100 mAdc, V

C

= 10 Vdc, f = 10 MHz)

CE

Output Capacitance

C

ob

(V

CB

= 10 Vdc, I = 0)

(f = 0.1 MHz)

BD787

BD788

—

—

50

70

C

Small–Signal Current Gain

h

fe

10

—

—

(I = 200 mAdc, V = 10 Vdc, f = 1.0 kHz)

C

CE

* Indicates JEDEC Registered Data

(1) Pulse Test; Pulse Width 300 µs, Duty Cycle

2.0%.

500

+ 30 V

V

CC

300

200

V

I

= 30 V

CC

/I = 10

25 µs

R

C

C B

+ 11 V

0

T

= 25°C

J

SCOPE

100

t

R

r

B

70

50

– 9.0 V

t , t 10 ns

51

D

1

30

20

r

f

t

@ V = 5.0 V

BE(off)

d

DUTY CYCLE = 1.0%

– 4 V

R

AND R VARIED TO OBTAIN DESIRED CURRENT LEVELS

B

C

BD787 (NPN)

BD788 (PNP)

10

D

MUST BE FAST RECOVERY TYPE, e.g.:

1

7.0

5.0

1N5825 USED ABOVE I

100 mA

100 mA

B

MSD6100 USED BELOW I

0.04 0.06

0.1

0.2

0.4 0.6

1.0

2.0

4.0

B

FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES.

I

, COLLECTOR CURRENT (AMP)

C

Figure 2. Switching Time Test Circuit

Figure 3. Turn–On Time

2

Motorola Bipolar Power Transistor Device Data

123 4 5 6

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