Datasheet > BD77504FV

BD77504FV

更新时间： 2024-11-05 02:52:51

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
29页	1896K
描述
High Speed Ground Sense Excellent EMI Characteristics CMOS Operational Amplifier

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BD77504FV 数据手册

EMARMOUR^TM

Nano Cap^TM

Datasheet

Operational Amplifier

High Speed Ground Sense

Excellent EMI Characteristics

CMOS Operational Amplifier

BD77501G BD77502FVM BD77504FV

General Description

Key Specifications

BD77501G, BD77502FVM and BD77504FV are

single/dual/quad Ground Sense CMOS operational

amplifier. An operating voltage range is wide with 7 V to

15 V. This operational amplifier is the most suitable for

various applications especially sensor amplifier and so on

because it has features of high slew rate and low input

bias current.

Also, BD77501G, BD77502FVM and BD77504FV have

the advantage of EMI tolerance. It makes easier replacing

with conventional products or simpler designing EMI.

Furthermore, this circuit type does not oscillate even with

a capacitance of several nF. Set design is possible

without worrying about oscillation due to output

capacitance.

◼ Input Offset Voltage:

4 mV (Typ)

◼ Common-mode Input Voltage Range:

V_SSto V_DD-2.0 V

◼ Slew Rate:

◼ Operating Supply Voltage Range

Single Supply:

10 V/µs (Typ)

7 V to 15 V

±3.5 V to ±7.5 V

-40 °C to +85 °C

Dual Supply:

◼ Operating Temperature Range:

Package

SSOP5

W (Typ) x D (Typ) x H (Max)

2.9 mm x 2.8 mm x 1.25 mm

2.9 mm x 4.0 mm x 0.9 mm

5.0 mm x 6.4 mm x 1.35 mm

MSOP8

SSOP-B14

Features

◼ EMARMOUR^TMSeries

◼ Nano Cap^TMintegrated OPAMP

◼ Operating with a Single Power Supply

◼ Input and output are operable GND sense

◼ High Slew Rate

◼ Wide Operating Supply Voltage Range

◼ High Open Loop Voltage Gain

SSOP5

MSOP8

Applications

◼ Sensor Amplifier

◼ Buffer Application Amplifier

◼ Current Monitoring Amplifier

◼ Consumer Electronics

Typical Application Circuit

C_F= 10 pF

SSOP-B14

R_F= 10 kΩ

VDD = +6.0 V

푅_퐹

푉_푂푈푇= −

푉

퐼푁

R_IN= 100 Ω

푅_퐼푁

V_IN

OUT

VSS = -6.0 V

EMARMOUR^TMand Nano Cap^TMare a trademark or a registered trademark of ROHM Co., Ltd.

〇Product structure : Silicon integrated circuit 〇This product has no designed protection against radioactive rays.

www.rohm.com

TSZ22111 • 14 • 001

TSZ02201-0GFG2G500010-1-2

30.Oct.2020 Rev.003

1/26

12 3 4 5 6 7...29

中文翻译

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