Datasheet > BD777/D

BD777/D

更新时间： 2024-11-22 23:35:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	49K
描述
Plastic Darlington Complementary Silicon Power Transistors

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数据手册

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BD777/D 数据手册

NPN

BD777

Plastic Darlington

Complementary Silicon Power

Transistors

PNP

BD776

BD778

BD780

. . . designed for general purpose amplifier and high–speed

switching applications.

• High DC Current Gain

= 1400 (Typ) @ I

*ON Semiconductor Preferred Device

= 2.0 Adc

• Collector–Emitter Sustaining Voltage — @ 10 mAdc

DARLINGTON

4–AMPERE

COMPLEMENTARY

SILICON

= 45 Vdc (Min) — BD776

= 60 Vdc (Min) — BD777, 778

= 80 Vdc (Min) — BD780

CEO(sus)

POWER TRANSISTORS

45, 60, 80 VOLTS

15 WATTS

• Reverse Voltage Protection Diode

• Monolithic Construction with Built–in Base–Emitter output Resistor

MAXIMUM RATINGS

BD777

BD778

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol BD776

BD780

Unit

Vdc

Adc

CEO

5.0

Collector Current —

Continuous Peak

4.0

6.0

Base Current

100

mAdc

CASE 77–08

TO–225AA TYPE

Total Device Dissipation

Watts

= 25_C – Derate above 25_C

0.12

W/_C

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

Unit

Thermal Resistance, Junction to Case

8.34

83.3

_C/W

Thermal Resistance, Junction to Ambient

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

January, 2001 – Rev. 8

BD776/D

12 3 4

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