Datasheet > BD750L5FP-C

BD750L5FP-C

更新时间： 2024-11-04 11:08:11

品牌	Logo	应用领域
罗姆 - ROHM		电池过电流保护电容器陶瓷电容器稳压器
页数	文件大小	规格书
23页	995K
描述
BD7xxL5FP-C系列是50V耐压、输出电压精度±2％、输出电流500mA、消耗电流6µA (Typ.) 的低待机电流稳压器，适合用来降低蓄电池直连系统的消耗电流。输出相位补偿电容器可使用陶瓷电容器。本IC内置防止因输出短路等发生IC破坏的过电流保护、以及防止因过负荷状态等使IC发生热破坏的过热保护电路。

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BD750L5FP-C 数据手册

Datasheet

Single-Output LDO Regulator

Ultra Low Quiescent Current LDO

Regulator

BD7xxL5FP-C

●General Description

●Key specifications

The BD7xxL5FP-C are low quiescent regulators

featuring 50V absolute maximum voltage, and output

voltage accuracy of ±2%, 500mA output current and 6μA

(Typ.) current consumption. There regulators are

therefore ideal for applications requiring a direct

connection to the battery and a low current consumption.

Ceramic capacitors can be used for compensation of the

output capacitor phase. Furthermore, these ICs also

feature overcurrent protection to protect the device from

damage caused by short-circuiting and an integrated

thermal shutdown to protect the device from overheating

at overload conditions.



Ultra low quiescent current:

Output voltage:

Output current capability:

High output voltage accuracy:

Low ESR ceramic capacitor can be used as

output capacitor

6μA (Typ.)

3.3V / 5.0V (Typ.)

500mA

±2%



AEC-Q100 Qualified

●Packages

FP: TO252-3

W (Typ.) x D (Typ.) x H (Max.)

6.50mm×9.50mm×2.50mm



●Features



Ultra low quiescent current: 6.0μA (Typ.)

Output current capability: 500mA

Output voltage: 3.3 V or 5.0 V(Typ.)

High output voltage accuracy: ±2%

Low saturation voltage by using PMOS output

transistor.

Figure 1. Package Outlook



Integrated overcurrent protection to protect the IC

from damage caused by output short-circuiting.

Integrated thermal shutdown to protect the IC from

overheating at overload conditions.

Low ESR ceramic capacitor can be used as output

capacitor.

TO252-3 package

●Applications



Automotive (body, audio system, navigation system, etc.)

●Typical Application Circuits

 Components externally connected: 0.1µF ≤ CIN, 4.7µF ≤ COUT (Typ.)

*Electrolytic, tantalum and ceramic capacitors can be used.

TO252-3

Figure 2. Typical Application Circuits

○Product structure：Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays

.www.rohm.com

TSZ02201-0G1G0AN00020-1-2

01.May.2014 Rev.004

1/20

TSZ22111・14・001

12 3 4 5 6 7...23

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与BD750L5FP-C相关器件

型号	品牌	获取价格	描述	数据表
BD750L5FP-CE2	ROHM	获取价格	Ultra Low Quiescent Current LDO Regulator
BD750U2EFJ-C	ROHM	获取价格	BD750U2EFJ-C是50V耐压、输出电压精度±2%、输出电流200mA、静态电流6μ
BD751	ISC	获取价格	isc Silicon NPN Power Transistors
BD7510/SLHBC	INTEL	获取价格	Micro Peripheral IC, PBGA655
BD7512/SLHBD	INTEL	获取价格	Micro Peripheral IC, PBGA655
BD751A	ISC	获取价格	isc Silicon NPN Power Transistors
BD751A	NJSEMI	获取价格	Trans GP BJT NPN 120V 20A
BD751B	ISC	获取价格	isc Silicon NPN Power Transistors
BD751C	ISC	获取价格	isc Silicon NPN Power Transistors
BD751C	NJSEMI	获取价格	Trans GP BJT NPN 130V 20A

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