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BD751 PDF预览

BD751

更新时间: 2024-02-26 17:36:24
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 81K
描述
isc Silicon NPN Power Transistors

BD751 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.58
Base Number Matches:1

BD751 数据手册

 浏览型号BD751的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistors  
BD751/751A  
DESCRIPTION  
· Collector-Emitter Sustaining Voltage-  
: VCEO(SUS) = 90V(Min)- BD751  
= 120V(Min)- BD751A  
·High Power Dissipation  
·Complement to Type BD750/750A  
APPLICATIONS  
·Designed for high voltage and high power amplifier  
applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
PARAMETER  
VALUE  
100  
130  
90  
UNIT  
BD751  
VCEV  
Collector-Emitter Voltage  
V
BD751A  
BD751  
VCEO(SUS) Collector-Emitter Voltage  
V
BD751A  
120  
7
VEBO  
IC  
Emitter-Base Voltage  
V
A
Collector Current-Continuous  
Base Current-Continuous  
20  
IB  
5
A
PC  
TJ  
Collector Power Dissipation@TC=25  
Junction Temperature  
200  
200  
-65~200  
W
Storage Temperature  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
0.875  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  

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