BD751B

更新时间： 2024-11-03 08:51:43

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	81K
描述
isc Silicon NPN Power Transistors

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中文翻译

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技术参数
数据手册

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BD751B 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Base Number Matches：	1

BD751B 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

BD751B/751C

DESCRIPTION

· Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 100V(Min)- BD751B

= 130V(Min)- BD751C

·High Power Dissipation

·Complement to Type BD750B/750C

APPLICATIONS

·Designed for high voltage and high power amplifier

applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

110

UNIT

BD751B

BD751C

BD751B

BD751C

V_CEV

Collector-Emitter Voltage

140

100

130

V_CEO(SUS)Collector-Emitter Voltage

V_EBO

I_C

Emitter-Base Voltage

Collector Current-Continuous

Base Current-Continuous

I_B

P_C

T_J

Collector Power Dissipation@T_C=25℃

Junction Temperature

250

200

-65~200

℃

Storage Temperature

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

0.875

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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