Datasheet > BD63875EFV_10

BD63875EFV_10

更新时间： 2024-09-11 08:51:39

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
5页	125K
描述
Silicon monolithic integrated circuits

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中文翻译

获取价格

数据手册

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BD63875EFV_10 数据手册

1/4

STRUCTURE

PRODUCT SERIES

TYPE

Silicon monolithic integrated circuits

Bipolar stepping motor driver

BD63875EFV

FUNCTION

・PWM constant current controllable two H bridge driver

・Built-in translator circuit for CLK-IN control

・Full, Half, and Quarter step modes

・Mix decay control

○Absolute maximum ratings(Ta=25℃)

Item

Symbol

V_CC1,2

Limit

Unit

Supply voltage

-0.2～+36.0

1.45^※

4.70^※

Power dissipation

Input voltage for control pin

RNF maximum voltage

Maximum output current

V_IN

V_RNF

I_OUT

-0.2～+5.5

0.7

1.5^※

2.0^※

A/phase

℃

Maximum output current(peak)^※

I_OUTPEAK

T_opr

Operating temperature range

Storage temperature range

Junction temperature

-25～+85

-55～+150

+150

T_stg

℃

T_jmax

℃

※

70mm×70mm×1.6mm glass epoxy board. Derating in done at 11.6mW/℃ for operating above Ta=25℃.

4-layer recommended board. Derating in done at 37.6mW/℃ for operating above Ta=25℃.

Do not, however exceed Pd, ASO and Tjmax=150℃.

Pulse width tw≦1ms, duty 20%.

○Recommended operating conditions (Ta=-25～+85℃)

Item

Supply voltage

Output current

Symbol

V_CC1,2

I_OUT

Min.

Typ.

Max.

1.2^※

Unit

1.0

A/phase

※

Do not, however exceed Pd, ASO.

This product isn’t designed for protection against radioactive rays.

REV. A

12 3 4 5

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