Datasheet > BD540

BD540

更新时间： 2024-11-01 22:39:31

品牌	Logo	应用领域
POINN		晶体晶体管
页数	文件大小	规格书
6页	88K
描述
PNP SILICON POWER TRANSISTORS

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数据手册

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BD540 数据手册

BD540, BD540A, BD540B, BD540C

PNP SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

●

Designed for Complementary Use with the

BD539 Series

TO-220 PACKAGE

(TOP VIEW)

●

45 W at 25°C Case Temperature

5 A Continuous Collector Current

Customer-Specified Selections Available

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BD540

-40

BD540A

BD540B

BD540C

BD540

-60

Collector-base voltage (I_E= 0)

V_CBO

-80

-100

-40

BD540A

BD540B

BD540C

-60

Collector-emitter voltage (I_B= 0) (see Note 1)

V_CEO

-80

-100

Emitter-base voltage

V_EBO

I_C

-5

Continuous collector current

-5

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Operating free air temperature range

P_tot

T_A

°C

-65 to +150

260

Operating junction temperature range

T_j

Storage temperature range

T_stg

T_L

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. These values apply when the base-emitter diode is open circuited.

2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6

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