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BD540-S PDF预览

BD540-S

更新时间: 2024-11-26 13:01:27
品牌 Logo 应用领域
伯恩斯 - BOURNS 晶体晶体管
页数 文件大小 规格书
5页 104K
描述
Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, FM-3

BD540-S 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.63
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):5 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):12
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):45 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:TIN SILVER COPPER
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BD540-S 数据手册

 浏览型号BD540-S的Datasheet PDF文件第2页浏览型号BD540-S的Datasheet PDF文件第3页浏览型号BD540-S的Datasheet PDF文件第4页浏览型号BD540-S的Datasheet PDF文件第5页 
BD540, BD540A, BD540B, BD540C  
PNP SILICON POWER TRANSISTORS  
Designed for Complementary Use with the  
BD539 Series  
TO-220 PACKAGE  
(TOP VIEW)  
45 W at 25°C Case Temperature  
5 A Continuous Collector Current  
Customer-Specified Selections Available  
1
2
3
B
C
E
Pin 2 is in electrical contact with the mounting base.  
MDTRACA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
BD540  
-40  
BD540A  
BD540B  
BD540C  
BD540  
-60  
Collector-base voltage (IE = 0)  
VCBO  
V
-80  
-100  
-40  
BD540A  
BD540B  
BD540C  
-60  
Collector-emitter voltage (IB = 0) (see Note 1)  
VCEO  
V
-80  
-100  
Emitter-base voltage  
VEBO  
IC  
-5  
V
Continuous collector current  
-5  
45  
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Operating free air temperature range  
Ptot  
Ptot  
TA  
W
W
°C  
°C  
°C  
°C  
2
-65 to +150  
-65 to +150  
-65 to +150  
260  
Operating junction temperature range  
Tj  
Storage temperature range  
Tstg  
TL  
Lead temperature 3.2 mm from case for 10 seconds  
NOTES: 1. These values apply when the base-emitter diode is open circuited.  
2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.  
JUNE 1973 - REVISED SEPTEMBER 2002  
Specifications are subject to change without notice.  
1

BD540-S 替代型号

型号 品牌 替代类型 描述 数据表
BD244B BOURNS

类似代替

PNP SILICON POWER TRANSISTORS
BD244A BOURNS

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PNP SILICON POWER TRANSISTORS
BD243 BOURNS

类似代替

NPN SILICON POWER TRANSISTORS

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