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BD540

更新时间: 2024-11-02 06:41:55
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
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2页 226K
描述
Silicon PNP Power Transistor

BD540 数据手册

 浏览型号BD540的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Power Transistor  
BD540  
DESCRIPTION  
·DC Current Gain -  
: hFE = 40(Min.)@ IC= -0.5A  
·Collector-Emitter Breakdown Voltage-  
: V(BR)CEO= -40V(Min)  
·Complement to Type BD539  
APPLICATIONS  
·Designed for use in medium power linear and switching  
applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
-40  
UNIT  
V
V
A
-40  
-5  
Collector Current-Coninuous  
-5  
Collector Power Dissipation  
@ Ta=25℃  
2
PC  
W
Collector Power Dissipation  
@ TC=25℃  
45  
TJ  
Junction Temperature  
150  
-65~150  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
2.78  
62.5  
UNIT  
/W  
/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
Rth j-c  
Rth j-a  
isc Websitewww.iscsemi.cn  

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