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BD540 PDF预览

BD540

更新时间: 2024-11-02 04:09:15
品牌 Logo 应用领域
伯恩斯 - BOURNS 晶体晶体管
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5页 104K
描述
PNP SILICON POWER TRANSISTORS

BD540 数据手册

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BD540, BD540A, BD540B, BD540C  
PNP SILICON POWER TRANSISTORS  
Designed for Complementary Use with the  
BD539 Series  
TO-220 PACKAGE  
(TOP VIEW)  
45 W at 25°C Case Temperature  
5 A Continuous Collector Current  
Customer-Specified Selections Available  
1
2
3
B
C
E
Pin 2 is in electrical contact with the mounting base.  
MDTRACA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
BD540  
-40  
BD540A  
BD540B  
BD540C  
BD540  
-60  
Collector-base voltage (IE = 0)  
VCBO  
V
-80  
-100  
-40  
BD540A  
BD540B  
BD540C  
-60  
Collector-emitter voltage (IB = 0) (see Note 1)  
VCEO  
V
-80  
-100  
Emitter-base voltage  
VEBO  
IC  
-5  
V
Continuous collector current  
-5  
45  
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Operating free air temperature range  
Ptot  
Ptot  
TA  
W
W
°C  
°C  
°C  
°C  
2
-65 to +150  
-65 to +150  
-65 to +150  
260  
Operating junction temperature range  
Tj  
Storage temperature range  
Tstg  
TL  
Lead temperature 3.2 mm from case for 10 seconds  
NOTES: 1. These values apply when the base-emitter diode is open circuited.  
2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.  
JUNE 1973 - REVISED SEPTEMBER 2002  
Specifications are subject to change without notice.  
1

BD540 替代型号

型号 品牌 替代类型 描述 数据表
BD243-S BOURNS

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