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BD243AS PDF预览

BD243AS

更新时间: 2024-02-11 05:02:59
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
6页 143K
描述
6A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB

BD243AS 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.69最大集电极电流 (IC):6 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):15JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:NPN
最大功率耗散 (Abs):65 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BD243AS 数据手册

 浏览型号BD243AS的Datasheet PDF文件第2页浏览型号BD243AS的Datasheet PDF文件第3页浏览型号BD243AS的Datasheet PDF文件第4页浏览型号BD243AS的Datasheet PDF文件第5页浏览型号BD243AS的Datasheet PDF文件第6页 
Order this document  
by BD243B/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for use in general purpose amplifier and switching applications.  
Collector – Emitter Saturation Voltage —  
= 1.5 Vdc (Max) @ I = 6.0 Adc  
Collector Emitter Sustaining Voltage —  
V
CE(sat)  
C
V
V
= 80 Vdc (Min) — BD243B, BD244B  
= 100 Vdc (Min) — BD243C, BD244C  
CEO(sus)  
CEO(sus)  
*Motorola Preferred Device  
High Current Gain Bandwidth Product  
f
= 3.0 MHz (Min) @ I = 500 mAdc  
T
C
6 AMPERE  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
Compact TO–220 AB Package  
MAXIMUM RATINGS  
80100 VOLTS  
65 WATTS  
BD243B  
BD244B  
BD243C  
BD244C  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
80  
80  
100  
100  
V
CB  
V
5.0  
EB  
Collector Current — Continuous  
Peak  
I
6
10  
C
Base Current  
I
B
2.0  
Adc  
Total Device Dissipation  
P
Watts  
D
@ T = 25 C  
65  
0.52  
C
Derate above 25 C  
W/ C  
C
CASE 221A–06  
TO–220AB  
Operating and Storage Junction  
Temperature Range  
T , T  
J
65 to +150  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
R
1.92  
C/W  
θJC  
80  
60  
40  
20  
0
0
20  
40  
60  
80  
100  
120  
C)  
140  
160  
T
, CASE TEMPERATURE (  
°
C
Figure 1. Power Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 7  
Motorola, Inc. 1995

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