Datasheet > BD242C

BD242C

更新时间： 2024-11-16 12:23:43

品牌	Logo	应用领域
COMSET		开关
页数	文件大小	规格书
3页	104K
描述
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS

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中文翻译

获取价格

技术参数
数据手册

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BD242C 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.56	最大集电极电流 (IC)：	5 A
配置：	Single	最小直流电流增益 (hFE)：	25
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	40 W	子类别：	Other Transistors
表面贴装：	NO	标称过渡频率 (fT)：	3 MHz
Base Number Matches：	1

BD242C 数据手册

PNP BD242 – A – B – C

MEDIUM POWER LINEAR AND SWITCHING

APPLICATIONS.

The BD242, A, B, C are the PNP transistors mounted in Jedec TO-220 plastic package.

They are the silicon epitaxial-base Power Transistors for use in medium power linear and

switching applications.

The NPN complements are BD241, A, B, C.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CEO

Ratings

Value

Unit

BD242

-45

-60

-80

-100

-55

BD242A

BD242B

BD242C

BD242

Collector-Emitter Voltage (I_B= 0)

BD242A

BD242B

BD242C

BD242

-70

-90

-115

V_CER

Collector-Emitter Voltage (R_BE= 100 Ω)

BD242A

BD242B

BD242C

V_EBO

Emitter-Base Voltage (I_C= 0)

-5.0

I_C

-3

-5

I_C

Collector Current

I_CM

I_B

Base Current

-1

@ T_amb= 25° C

@ T_case= 25° C

150

P_T

Power Dissipation

Junction Temperature

Storage Temperature

T_J

T_S

°C

-65 to +150

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

R_thJ-amb

R_thJ-case

Thermal Resistance, Junction-ambient

Thermal Resistance, Junction-case

62.5

3.13

°C/W

23/10/2012

COMSET SEMICONDUCTORS

1/3

12 3

中文翻译

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与BD242C相关器件

型号	品牌	获取价格	描述	数据表
BD242C16	MOTOROLA	获取价格	3A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB
BD242C16A	MOTOROLA	获取价格	3A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB
BD242C-6200	RENESAS	获取价格	5A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB
BD242C-6203	RENESAS	获取价格	5A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB
BD242C-6226	RENESAS	获取价格	5A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB
BD242C-6255	RENESAS	获取价格	5A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB
BD242C-6258	RENESAS	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BD242C-6261	RENESAS	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BD242C-6263	RENESAS	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BD242C-6264	RENESAS	获取价格	5A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB