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BD01C

更新时间： 2024-11-10 23:35:03

品牌	Logo	应用领域
其他 - ETC		晶体放大器晶体管
页数	文件大小	规格书
4页	135K
描述
NPN Silicon 1 Watt Amplifier Transistors

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BD01C 数据手册

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by BDB01C/D

SEMICONDUCTOR TECHNICAL DATA

NPN Silicon

COLLECTOR

BASE

EMITTER

CASE 29–05, STYLE 1

TO–92 (TO–226AE)

MAXIMUM RATINGS

Rating

Symbol

BDB01C

BDB01D

100

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

100

CES

EBO

5.0

0.5

Collector Current — Continuous

Total Device Dissipation

1.0

8.0

Watt

mW/°C

@ T = 25°C

Derate above 25°C

Total Device Dissipation

2.5

Watt

mW/°C

@ T = 25°C

Derate above 25°C

Operating and Storage Junction

Temperature Range

T , T

J stg

–55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

125

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Collector–Emitter Voltage

Vdc

(BR)CEO

(I = 10 mA, I = 0)

BDB01C

BDB01D

100

—

Collector Cutoff Current

Adc

CBO

= 80 V, I = 0)

BDB01C

BDB01D

—

0.01

= 100 V, I = 0)

Emitter Cutoff Current

(I = 0, V = 5.0 V)

—

100

nAdc

EBO

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

12 3 4

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