Datasheet > BD034_15

BD034_15

更新时间： 2024-02-25 17:12:11

品牌	Logo	应用领域
SECOS		/
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1页	80K
描述
PNP General Purpose Transistor

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数据手册

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BD034_15 数据手册

BD034

PNP General Purpose Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead free

FEATURES

TO-126

ꢀ

High Current

High Transition Frequency

ꢀ

1Emitter

2Collector

3Base

CLASSIFICATION OF h_FE

Product-Rank

BD034-R

BD034-S

140~280

BD034-T

200~400

Range

100~200

Millimeter

REF.

Min.

Max.

Min.

Max.

1.50

0.60

0.86

2.30

1.37

3.20

7.40

2.50

7.80

2.90

1.10

0.45

0.66

2.10

1.17

3.00

10.60

15.30

3.70

11.00

15.70

3.90

4.10

2.29 TYP.

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Collector - Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

-110

-95

Unit

Collector - Emitter Voltage

Emitter - Base Voltage

-7

Collector Current -Continuous

Collector Power Dissipation

Maximum Junction to Ambient

Junction, Storage Temperature

-2.5

P_C

1.25

100

R_θJA

°C / W

°C

T_J, T_STG

150, -55 ~ 150

ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)

Parameter

Symbol Min.

Typ.

Max.

Unit

Test Conditions

I_C= -0.1mA, I_E=0

Collector - Base Breakdown Voltage

V_(BR)CBO

V_CEO(SUS)

V_(BR)EBO

I_CBO

-110

Collector-emitter sustaining voltage ¹

Emitter - Base Breakdown Voltage

Collector Cut - Off Current

-95

-7

I_C= -10mA, I_B=0

I_C=0, I_E= -0.1mA

-1

400

µA

V_CB= -100V, I_E= 0

Emitter Cut-Off Current

I_EBO

V_EB= -5V, I_C= 0

100

V_CE= -2V, I_C= -100mA

V_CE= -2V, I_C= -1.5mA

I_C= -2A, I_B= -200mA

V_CE= -5V, I_C= -500mA

V_CE= -1V, I_C= -250mA, f=1MHz

DC Current Gain ¹

h_FE

Collector - Emitter Saturation Voltage ¹

Base – Emitter Voltage ¹

V_CE(sat)

V_BE

-0.5

-1

Transition frequency

f_T

MHz

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

28-Jan-2014 Rev. A

Page 1 of 1

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