Datasheet > BD034

BD034

更新时间： 2024-02-08 19:11:33

品牌	Logo	应用领域
江苏长电/长晶 - CJ		晶体晶体管
页数	文件大小	规格书
2页	96K
描述
TRANSISTOR (PNP)

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中文翻译

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数据手册

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BD034 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-126 Plastic-Encapsulate Transistors

BD034 TRANSISTOR (PNP)

TO-126

FEATURES

Power dissipation

1. EMITTER

2. COLLECTOR

3. BASE

P_CM:

1.25

W (Tamb=25℃)

Collector current

I_CM:

-2.5

1 2 3

Collector-base voltage

V_(BR)CBO

-110

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃

unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

MIN

-110

-80

-7

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Ic=-100µA, I_E=0

Ic=-10mA, I_B=0

I_E=-100µA, I_C=0

V_CB=-100V, I_E=0

-1

µA

Emitter cut-off current

I_EBO

V_EB=-5V, I_C=0

h_FE(1)

V_CE=-2V, I_C=-100mA

V_CE=-2V, I_C=-1.5A

I_C=-2A, I_B=-200mA

V_CE=-5V, I_C=-500mA

V_CE=-1V, I_C=-250mA, f=1MHz

100

560

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

-0.5

-1

Transition frequency

f_T

MHz

CLASSIFICATION OF h_FE(1)

Rank

100-200

140-280

200-400

280-560

Range

中文翻译

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