Datasheet > BCX51-Q

BCX51-Q

更新时间： 2024-03-03 10:10:11

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	234K
描述
45 V, 1 A PNP medium power transistorsProduction

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BCX51-Q 数据手册

Nexperia

BCX51-Q series

45 V, 1 A PNP medium power transistors

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max Unit

I_CBO

collector-base

cut-off current

V_CB= -30 V; I_E= 0 A

T_amb= 25 °C

-100 nA

V_CB= -30 V; I_E= 0 A; T_j= 150 °C

-10

µA

I_EBO

h_FE

emitter-base

cut-off current

V_EB= -5 V; I_C= 0 A

T_amb= 25 °C

-100 nA

DC current gain

BCX51-Q

V_CE= -2 V; I_C= -5 mA

T_amb= 25 °C

[1] 63

V_CE= -2 V; I_C= -150 mA

T_amb= 25 °C

250

V_CE= -2 V; I_C= -500 mA

T_amb= 25 °C

BCX51-10-Q

BCX51-16-Q

V_CE= -2 V; I_C= -5 mA

T_amb= 25 °C

[1] 63

V_CE= -2 V; I_C= -150 mA

T_amb= 25 °C

160

V_CE= -2 V; I_C= -500 mA

T_amb= 25 °C

V_CE= -2 V; I_C= -5 mA

T_amb= 25 °C

[1] 63

V_CE= -2 V; I_C= -150 mA

T_amb= 25 °C

100

250

V_CE= -2 V; I_C= -500 mA

T_amb= 25 °C

V_CEsat

V_BE

C_c

collector-emitter

saturation voltage

I_C= -500 mA; I_B= -50 mA

T_amb= 25 °C

[1]

-0.5

base-emitter voltage

collector capacitance

transition frequency

V_CE= -2 V; I_C= -500 mA

T_amb= 25 °C

-1

V_CB= -10 V; I_E= i_e= 0 A; f = 1 MHz

T_amb= 25 °C

145

MHz

f_T

V_CE= -5 V; I_C= -50 mA; f = 100 MHz

T_amb= 25 °C

[1] pulsed; t_p≤ 300 μs; δ ≤ 0.02

BCX51-Q_SER

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Product data sheet

Rev. 1 — 16 October 2023

6 / 12

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