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BCX51TRL PDF预览

BCX51TRL

更新时间: 2024-11-27 12:58:59
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恩智浦 - NXP 晶体小信号双极晶体管放大器
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BCX51TRL 数据手册

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BC636; BCP51; BCX51  
45 V, 1 A PNP medium power transistors  
Rev. 08 — 22 February 2008  
Product data sheet  
1. Product profile  
1.1 General description  
PNP medium power transistor series.  
Table 1.  
Product overview  
Type number[1]  
Package  
NXP  
NPN complement  
JEITA  
SC-43A  
SC-73  
SC-62  
JEDEC  
TO-92  
-
BC636[2]  
BCP51  
BCX51  
SOT54  
SOT223  
SOT89  
BC635  
BCP54  
BCX54  
TO-243  
[1] Valid for all available selection groups.  
[2] Also available in SOT54A and SOT54 variant packages (see Section 2).  
1.2 Features  
I High current  
I Two current gain selections  
I High power dissipation capability  
1.3 Applications  
I Linear voltage regulators  
I High-side switches  
I MOSFET drivers  
I Amplifiers  
1.4 Quick reference data  
Table 2.  
Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
45  
1  
Unit  
V
VCEO  
IC  
collector-emitter voltage open base  
collector current  
-
-
-
-
-
-
A
ICM  
hFE  
peak collector current  
DC current gain  
single pulse; tp 1 ms  
-
1.5  
250  
A
VCE = 2 V;  
63  
IC = 150 mA  
hFE selection -10  
hFE selection -16  
VCE = 2 V;  
IC = 150 mA  
63  
-
-
160  
250  
VCE = 2 V;  
100  
IC = 150 mA  

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