Datasheet > BCX51-Q

BCX51-Q

更新时间： 2024-03-03 10:10:11

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	234K
描述
45 V, 1 A PNP medium power transistorsProduction

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BCX51-Q 数据手册

Nexperia

BCX51-Q series

45 V, 1 A PNP medium power transistors

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

T_amb= 25 °C unless otherwise specified.

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Conditions

open emitter

open base

Min

Max

-45

-5

Unit

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current

open collector

-1

I_CM

peak collector current

base current

single pulse; t_p≤ 1 ms

-2

I_B

-0.3

0.50

0.95

1.35

150

I_BM

peak base current

total power dissipation

single pulse; t_p≤ 1 ms

T_amb≤ 25 °C

P_tot

[1]

[2]

[3]

°C

T_j

junction temperature

ambient temperature

storage temperature

T_amb

T_stg

-55

-65

[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 1 cm².

[3] Device mounted on an FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 6 cm².

006aac675

1.5

(1)

tot

(W)

(2)

(3)

1.0

0.5

0.0

-75

-25

125

175

(°C)

amb

(1) FR4 PCB, single-sided copper, mounting pad for collector 6 cm²

(2) FR4 PCB, single-sided copper, mounting pad for collector 1 cm²

(3) FR4 PCB, single-sided copper, standard footprint

Fig. 1. Power derating curves

BCX51-Q_SER

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 1 — 16 October 2023

3 / 12

1 234 5 6 7...12

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