Datasheet > BCX51U

BCX51U

更新时间： 2024-11-25 14:55:43

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
4页	559K
描述
功率三极管

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中文翻译

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数据手册

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BCX51U 数据手册

BCX51U

PNP Silicon Epitaxial Planar Power Transistor

Features

• Low Saturation Voltage V_CE(sat)

• Epitaxial Planar Die Construction

Applications

• Medium Power Switching or Amplification Applications

• AF driver and output stages

Absolute Maximum Ratings

Parameter

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Peak Collector Current, Pulsed

Total Power Dissipation

Junction Temperature

Storage Temperature Range

-I_CM

1.5

P_tot

T_j

150

- 55 to + 150

T_stg

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

125

Unit

Thermal Resistance from Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 4

Dated: 29/04/2021 Rev:01

12 3 4

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