Datasheet > BCX19LT1

BCX19LT1

更新时间： 2024-11-13 17:15:27

品牌	Logo	应用领域
浩畅 - HC		/
页数	文件大小	规格书
2页	1560K
描述
SOT-23

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中文翻译

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数据手册

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BCX19LT1 数据手册

SHENZHEN HAOCHANG SEMICONDUCTOR CO.,LTD.

SOT-23 Plastic-Encapsulate Transistors

BCX19

NPN Transistors

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● Collector Current Capability IC=0.5A

● Collector Emitter Voltage V^CEO=45V

● Low voltage

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

500

225

150

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= 100 μA， I = 0

Ic= 1 mA， I = 0

= 100μA， I

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

= 0

CBO

EBO

CB= 50 V , I

EB= 5V , I

=500 mA, I

= 500 mA, I

= 0

0.1

=50mA

= 50mA

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base-emitter voltage

CE(sat)

BE(sat)

0.62

1.2

BE(on)

^CE= 1V, I

CE= 1V, I

= 500mA

= 100mA

= 300mA

= 500mA

1.2

FE(1)

FE(2)

FE(3)

100

600

DC current gain

Collector capacitance

Transition frequency

^CB= 10V, I

E=Ie=0,f=1MHz

^CE= 5V, I = 10mA,f=100MHz

100

MHz

■ Marking

Marking

浩畅半导体

RevK：M ay2014

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